NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMG370XN PMG370XN

Description
Manufacturer: NXP Win Source Part Number: 061972-PMG370XN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 960mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.65nC @ 4.5V Max Input Capacitance: 37pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 440 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: NXP Win Source Part Number: 061972-PMG370XN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 960mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.65nC @ 4.5V Max Input Capacitance: 37pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 440 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMG370XN - 061972-PMG370XN - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMG370XN
061972-PMG370XN
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMG370XN 061972-PMG370XN
Manufacturer: NXP Win Source Part Number: 061972-PMG370XN Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 960mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.65nC @ 4.5V Max Input Capacitance: 37pF @ 25V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 440 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: NXP
Win Source Part Number: 061972-PMG370XN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 690mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 960mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.65nC @ 4.5V
Max Input Capacitance: 37pF @ 25V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 440 mOhm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 061972-PMG370XN
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMG370XN
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 690 milliwatts
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