NXP Semiconductors Single FETs, MOSFETs PMFPB6532UP,115

Description
P-Channel 20V 3.5A (Ta) 520mW (Ta), 8.3W (Tc) Surface Mount 6-HUSON (2x2)
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Description
P-Channel 20V 3.5A (Ta) 520mW (Ta), 8.3W (Tc) Surface Mount 6-HUSON (2x2)
Request a Quote Datasheet

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Single FETs, MOSFETs - 568-6531-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-6531-2-ND
Single FETs, MOSFETs 568-6531-2-ND
P-Channel 20V 3.5A (Ta) 520mW (Ta), 8.3W (Tc) Surface Mount 6-HUSON (2x2)

P-Channel 20V 3.5A (Ta) 520mW (Ta), 8.3W (Tc) Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMFPB6532UP,115 - 1089669-PMFPB6532UP,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMFPB6532UP,115
1089669-PMFPB6532UP,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMFPB6532UP,115 1089669-PMFPB6532UP,115
Manufacturer: NXP Win Source Part Number: 1089669-PMFPB6532UP, 115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 520mW (Ta), 8.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: DFN2020-6 Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 380pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 70 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: NXP
Win Source Part Number: 1089669-PMFPB6532UP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 520mW (Ta), 8.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: DFN2020-6
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 380pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 70 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 568-6531-2-ND 1089669-PMFPB6532UP,115
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMFPB6532UP,115
Polarity P-Channel P-Channel; P-Channel
Package Type 6-UDFN Exposed Pad SOT3; DFN2020-6
V(BR)DSS 20 volts
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