NXP Semiconductors Single Bipolar Transistors PMEM4030NS,115

Description
Bipolar (BJT) Transistor NPN + Diode (Isolated) 50V 2A 100MHz 1W Surface Mount 8-SO
  • Single Bipolar Transistors - PMEM4030NS,115-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - PMEM4030NS,115 - 1089656-PMEM4030NS,115 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PMEM4030NS,115 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN + Diode (Isolated) 50V 2A 100MHz 1W Surface Mount 8-SO
Request a Quote Datasheet

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Single Bipolar Transistors - PMEM4030NS,115-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
PMEM4030NS,115-ND
Single Bipolar Transistors PMEM4030NS,115-ND
Bipolar (BJT) Transistor NPN + Diode (Isolated) 50V 2A 100MHz 1W Surface Mount 8-SO

Bipolar (BJT) Transistor NPN + Diode (Isolated) 50V 2A 100MHz 1W Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PMEM4030NS,115 - 1089656-PMEM4030NS,115 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PMEM4030NS,115
1089656-PMEM4030NS,115
TRANSISTORS - Transistors (BJT) - Single - PMEM4030NS,115 1089656-PMEM4030NS,115
Manufacturer: NXP Win Source Part Number: 1089656-PMEM4030NS,1 15 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Diode (Isolated) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 370mV @ 300mA, 3A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 1A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 1089656-PMEM4030NS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN + Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 370mV @ 300mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 1A, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PMEM4030NS,115 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PMEM4030NS,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PMEM4030NS,115
TRANS NPN 50V 2A 8SO

TRANS NPN 50V 2A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number PMEM4030NS,115-ND 1089656-PMEM4030NS,115 PMEM4030NS,115
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PMEM4030NS,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN + Diode (Isolated)
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