NXP Semiconductors Single FETs, MOSFETs PMDPB70XPE

PMDPB70XPE is a dual P-channel enhancement mode MOSFET in a DFN2020-6 (SOT1118) leadless surface-mount package, designed for high-speed switching, load switching, and relay driver applications. Each transistor has a maximum drain-source voltage of -20 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of -3 A at 25°C with a standard footprint. The typical drain-source on-state resistance is 66 mΩ at -4.5 V gate voltage and 25°C. The device provides 2 kV ESD protection and operates with a junction temperature range of -55°C to 150°C. Thermal resistance from junction to ambient is 90 to 104 K/W with a 6 cm² drain pad.