NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB42UN,115 PMDPB42UN,115

Manufacturer: NXP
Win Source Part Number: 1089508-PMDPB42UN,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 510mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.5nC @ 4.5V
Max Input Capacitance: 185pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Small Signal Field-Effect Transistor, HUSON6

Mosfet Array 2 N-Channel (Dual) 20V 3.9A 510mW Surface Mount 6-HUSON (2x2)

MOSFET 2N-CH 20V 3.9A 6HUSON Product overview: PMDPB42UN,115 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB42UN,115 can be used for catalog matching and distributor lookup.