NXP Semiconductors JFETs (Junction Field Effect) - PMBFJ177,215 PMBFJ177,215

Manufacturer: NXP
Win Source Part Number: 096349-PMBFJ177,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Resistance - RDS(On): 300 Ohm
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 30V
Max Input Capacitance: 8pF @ 10V (VGS)
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO-236AB)

JFET P-CH 30V SOT23 Product overview: PMBFJ177,215 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, SOT23, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-PMBFJ177,215 can be used for catalog matching and distributor lookup.