NXP Semiconductors JFETs (Junction Field Effect) - PMBFJ175 PMBFJ175

Manufacturer: NXP
Win Source Part Number: 094696-PMBFJ175
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Resistance - RDS(On): 125 Ohm
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 30V
Max Input Capacitance: 8pF @ 10V (VGS)
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

JFET P-CH 30V 0.3W SOT23 Product overview: PMBFJ175 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.3W, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.3W, SOT23, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-PMBFJ175 can be used for catalog matching and distributor lookup.