NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHT6NQ10T,135 PHT6NQ10T,135

Manufacturer: Nexperia USA Inc. Win Source Part Number: 112369-PHT6NQ10T,135 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 633pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 90 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): PHT6NQ10T; PHT6NQ10TT; PHT6NQ10T T/R; PHT6NQ10T,135; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance