NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHT6N06T,135 PHT6N06T,135

Manufacturer: NXP
Win Source Part Number: 101121-PHT6N06T,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 5.6nC @ 10V
Max Input Capacitance: 175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

MOSFET N-CH 55V 5.5A SOT223 Product overview: PHT6N06T,135 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHT6N06T,135 can be used for catalog matching and distributor lookup.