NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP63NQ03LT PHP63NQ03LT

Manufacturer: NXP
Win Source Part Number: 061493-PHP63NQ03LT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 111W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 68.9A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 9.6nC @ 5V
Max Input Capacitance: 920pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 68.9A TO220AB Product overview: PHP63NQ03LT from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 68.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 68.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHP63NQ03LT can be used for catalog matching and distributor lookup.