Manufacturer: NXP
Win Source Part Number: 042119-PHP55N03LTA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET N-CH 25V 55A TO220AB Product overview: PHP55N03LTA from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 55A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHP55N03LTA can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 042119-PHP55N03LTA | 285-PHP55N03LTA |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP55N03LTA | 25V 55A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 25 volts | |
| PD | 85000 milliwatts | 85000 milliwatts |