NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP45N03LTA PHP45N03LTA

Description
Manufacturer: NXP Win Source Part Number: 274142-PHP45N03LTA Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 19nC @ 5V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: NXP Win Source Part Number: 274142-PHP45N03LTA Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 19nC @ 5V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP45N03LTA - 274142-PHP45N03LTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP45N03LTA
274142-PHP45N03LTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP45N03LTA 274142-PHP45N03LTA
Manufacturer: NXP Win Source Part Number: 274142-PHP45N03LTA Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 65W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 19nC @ 5V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 274142-PHP45N03LTA
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 19nC @ 5V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 274142-PHP45N03LTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP45N03LTA
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 65000 milliwatts
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