NXP Semiconductors Single FETs, MOSFETs PHP3055E,127

Description
N-Channel 60V 10.3A (Tc) 33W (Tc) Through Hole TO-220AB
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Description
N-Channel 60V 10.3A (Tc) 33W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - PHP3055E,127-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
PHP3055E,127-ND
Single FETs, MOSFETs PHP3055E,127-ND
N-Channel 60V 10.3A (Tc) 33W (Tc) Through Hole TO-220AB

N-Channel 60V 10.3A (Tc) 33W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP3055E,127 - 1085465-PHP3055E,127 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP3055E,127
1085465-PHP3055E,127
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP3055E,127 1085465-PHP3055E,127
Manufacturer: NXP Win Source Part Number: 1085465-PHP3055E,127 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 1085465-PHP3055E,127
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PHP3055E,127 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PHP3055E,127
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PHP3055E,127
MOSFET N-CH 60V 10.3A TO220AB

MOSFET N-CH 60V 10.3A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PHP3055E,127-ND 1085465-PHP3055E,127 PHP3055E,127
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHP3055E,127 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
V(BR)DSS 60 volts
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