NXP Semiconductors Single FETs, MOSFETs PHP18NQ11T,127

N-channel TrenchMOS FET for switching applications in computing, communications, consumer, and industrial systems, housed in a TO-220AB (SOT78) package with a mounting base connected to the drain. It has a drain-source voltage rating of 110 V, a continuous drain current of 18 A at 25°C, and a maximum power dissipation of 79 W. The on-state drain-source resistance is 80 to 90 mΩ at 25°C and 9 A, with a gate-source threshold voltage ranging from 1 to 4.4 V. The device features fast switching, low thermal resistance from junction to mounting base of 1.9 K/W, and avalanche ruggedness with a non-repetitive avalanche energy of 70 mJ.