NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHM21NQ15T PHM21NQ15T

Manufacturer: NXP
Win Source Part Number: 061482-PHM21NQ15T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-HVSON (6x5)
Dimension: 8-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 22.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 36.2nC @ 10V
Max Input Capacitance: 2080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

MOSFET N-CH 150V 22.2A 8HVSON Product overview: PHM21NQ15T from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 22.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 22.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHM21NQ15T can be used for catalog matching and distributor lookup.