NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02 PHKD6N02

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 045758-PHKD6N02 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 4.17W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.9A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 15.3nC @ 5V Max Input Capacitance: 950pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 045758-PHKD6N02 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 4.17W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.9A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 15.3nC @ 5V Max Input Capacitance: 950pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02 - 045758-PHKD6N02 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02
045758-PHKD6N02
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02 045758-PHKD6N02
Manufacturer: Nexperia USA Inc. Win Source Part Number: 045758-PHKD6N02 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 4.17W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.9A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 15.3nC @ 5V Max Input Capacitance: 950pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 045758-PHKD6N02
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 4.17W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 15.3nC @ 5V
Max Input Capacitance: 950pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 045758-PHKD6N02
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02
Polarity N-Channel
V(BR)DSS 20 volts
PD 4170 milliwatts
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