NXP Semiconductors 20V 10.9A MOSFET Transistor PHKD6N02

Description
MOSFET 2N-CH 20V 10.9A SOT96-1 Product overview: PHKD6N02 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHKD6N02 can be used for catalog matching and distributor lookup.
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Description
MOSFET 2N-CH 20V 10.9A SOT96-1 Product overview: PHKD6N02 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHKD6N02 can be used for catalog matching and distributor lookup.
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Suppliers

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Product
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Singapore
20V 10.9A MOSFET Transistor
285-PHKD6N02
20V 10.9A MOSFET Transistor 285-PHKD6N02
MOSFET 2N-CH 20V 10.9A SOT96-1 Product overview: PHKD6N02 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHKD6N02 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 10.9A SOT96-1 Product overview: PHKD6N02 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHKD6N02 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02 - 045758-PHKD6N02 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02
045758-PHKD6N02
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02 045758-PHKD6N02
Manufacturer: Nexperia USA Inc. Win Source Part Number: 045758-PHKD6N02 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 4.17W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.9A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 15.3nC @ 5V Max Input Capacitance: 950pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 045758-PHKD6N02
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 4.17W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 15.3nC @ 5V
Max Input Capacitance: 950pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-PHKD6N02 045758-PHKD6N02
Product Name 20V 10.9A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHKD6N02
PD 4170 milliwatts 4170 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Reel - TR SOT3; 8-SO
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