NXP Semiconductors Single Bipolar Transistors PHE13007,127

The PHE13007 is an npn silicon diffused power transistor in a TO-220AB package, designed for high-frequency switching applications such as lighting ballasts, converters, and motor control systems. It has a collector-emitter voltage rating of 700 V and a continuous collector current of 8 A, with a peak current of 16 A. The device dissipates up to 80 W at 25 °C and features a junction-to-mounting-base thermal resistance of 1.56 K/W. Pin 1 is the base, pin 2 is the collector, and pin 3 is the emitter, with the tab connected to the collector. It meets the IEC 60134 Absolute Maximum Rating System and has a maximum junction temperature of 150 °C.