MOSFET N-CH 200V 8.7A DPAK Product overview: PHD9NQ20T from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 8.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 8.7A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHD9NQ20T can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 042104-PHD9NQ20T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 8.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 959pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): FQD10N20TM; PHD9NQ20T,118; PHD9NQ20T; STD7NB20;
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-PHD9NQ20T | 042104-PHD9NQ20T |
| Product Name | 200V 8.7A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD9NQ20T |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 88000 milliwatts | 88000 milliwatts |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |