NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD38N02LT PHD38N02LT

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 209899-PHD38N02LT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 57.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 44.7A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 15.1nC @ 5V
Max Input Capacitance: 800pF @ 20V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 16 mOhm @ 25A, 5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 44.7A DPAK Product overview: PHD38N02LT from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 44.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 44.7A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHD38N02LT can be used for catalog matching and distributor lookup.