NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E PHD3055E

Manufacturer: NXP
Win Source Part Number: 209897-PHD3055E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Family Name: PHD3055E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): RSD220N06TL; RD3L050SNFRATL; RD3L050SNTL1; RD3L080SNTL1;
Introduction Date: September 01, 1997
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 10.3A DPAK / Trans MOSFET N-CH 60V 10.3A 3-Pin(2+Tab) DPAK Product overview: PHD3055E from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.3A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHD3055E can be used for catalog matching and distributor lookup.