NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E PHD3055E

Description
Manufacturer: NXP Win Source Part Number: 209897-PHD3055E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Family Name: PHD3055E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): RSD220N06TL; RD3L050SNFRATL; RD3L050SNTL1; RD3L080SNTL1; Introduction Date: September 01, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: NXP Win Source Part Number: 209897-PHD3055E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Family Name: PHD3055E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): RSD220N06TL; RD3L050SNFRATL; RD3L050SNTL1; RD3L080SNTL1; Introduction Date: September 01, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E - 209897-PHD3055E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E
209897-PHD3055E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E 209897-PHD3055E
Manufacturer: NXP Win Source Part Number: 209897-PHD3055E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Family Name: PHD3055E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): RSD220N06TL; RD3L050SNFRATL; RD3L050SNTL1; RD3L080SNTL1; Introduction Date: September 01, 1997 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: NXP
Win Source Part Number: 209897-PHD3055E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Family Name: PHD3055E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): RSD220N06TL; RD3L050SNFRATL; RD3L050SNTL1; RD3L080SNTL1;
Introduction Date: September 01, 1997
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 209897-PHD3055E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD3055E
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 33000 milliwatts
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