NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHD21N06LT PHD21N06LT

Manufacturer: NXP
Win Source Part Number: 045756-PHD21N06LT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 9.4nC @ 5V
Max Input Capacitance: 650pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 70 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 55V 19A DPAK Product overview: PHD21N06LT from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHD21N06LT can be used for catalog matching and distributor lookup.