NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC2300,118 PHC2300,118

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004349-PHC2300,118 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 340mA, 235mA Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 6.24nC @ 10V Max Input Capacitance: 102pF @ 50V Maximum Rds On at Id,Vgs: 6 Ohm @ 170mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004349-PHC2300,118 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 340mA, 235mA Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 6.24nC @ 10V Max Input Capacitance: 102pF @ 50V Maximum Rds On at Id,Vgs: 6 Ohm @ 170mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC2300,118 - 004349-PHC2300,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC2300,118
004349-PHC2300,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC2300,118 004349-PHC2300,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 004349-PHC2300,118 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 340mA, 235mA Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 6.24nC @ 10V Max Input Capacitance: 102pF @ 50V Maximum Rds On at Id,Vgs: 6 Ohm @ 170mA, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 004349-PHC2300,118
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 340mA, 235mA
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 6.24nC @ 10V
Max Input Capacitance: 102pF @ 50V
Maximum Rds On at Id,Vgs: 6 Ohm @ 170mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 004349-PHC2300,118
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC2300,118
Polarity P-Channel
V(BR)DSS 300 volts
PD 1600 milliwatts
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