NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB21N06LT,118 PHB21N06LT,118

Manufacturer: Nexperia USA Inc. Win Source Part Number: 004343-PHB21N06LT,11 8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 9.4nC @ 5V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 70 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited