NXP Semiconductors 55V 10.3A MOSFET Transistor PHB11N06LT

MOSFET N-CH 55V 10.3A D2PAK Product overview: PHB11N06LT from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 10.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 10.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PHB11N06LT can be used for catalog matching and distributor lookup.

Manufacturer: NXP
Win Source Part Number: 273835-PHB11N06LT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 5.2nC @ 5V
Max Input Capacitance: 330pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 130 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance