NXP Semiconductors Single FETs, MOSFETs PHB112N06T,118

Description
N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK
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Description
N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - PHB112N06T,118-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
PHB112N06T,118-ND
Single FETs, MOSFETs PHB112N06T,118-ND
N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK

N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB112N06T,118 - 791761-PHB112N06T,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB112N06T,118
791761-PHB112N06T,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB112N06T,118 791761-PHB112N06T,118
Manufacturer: NXP Win Source Part Number: 791761-PHB112N06T,11 8 Series: TrenchMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Part Status: Obsolete(EOL) Family Name: PHB112N06T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK Channel Type Type: N Drain Source Voltage: 55V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4352pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 200W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): PHB112N06T; PHB112N06TT; PHB112N06T T/R; Introduction Date: March 07, 2001 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: NXP
Win Source Part Number: 791761-PHB112N06T,118
Series: TrenchMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Part Status: Obsolete(EOL)
Family Name: PHB112N06T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4352pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 200W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): PHB112N06T; PHB112N06TT; PHB112N06T T/R;
Introduction Date: March 07, 2001
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PHB112N06T,118 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PHB112N06T,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PHB112N06T,118
MOSFET N-CH 55V 75A D2PAK

MOSFET N-CH 55V 75A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PHB112N06T,118-ND 791761-PHB112N06T,118 PHB112N06T,118
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB112N06T,118 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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