NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH20100S,115 PH20100S,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 121964-PH20100S,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 34.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2264pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 121964-PH20100S,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 34.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2264pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH20100S,115 - 121964-PH20100S,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH20100S,115
121964-PH20100S,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH20100S,115 121964-PH20100S,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 121964-PH20100S,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 34.3A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2264pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 121964-PH20100S,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 34.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2264pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 121964-PH20100S,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PH20100S,115
Polarity N-Channel; N-Channel
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