NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD4,115 PEMD4,115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PEMD4,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD4,115 - 113144-PEMD4,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD4,115
113144-PEMD4,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD4,115 113144-PEMD4,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 113144-PEMD4,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-666 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 200 @ 1mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 113144-PEMD4,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 200 @ 1mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number PEMD4,115 113144-PEMD4,115
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD4,115
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
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