NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315 PEMD2,315

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
  • PEMD2,315 - Rochester Electronics
    Rochester Electronics
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315 - 097551-PEMD2,315 - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistor Arrays, Pre-Biased - 568-PEMD2,315TR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- PEMD2,315 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PEMD2,315
PEMD2,315
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315 - 097551-PEMD2,315 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315
097551-PEMD2,315
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315 097551-PEMD2,315
Manufacturer: Nexperia USA Inc. Win Source Part Number: 097551-PEMD2,315 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-666 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 60 @ 5mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 097551-PEMD2,315
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 60 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 568-PEMD2,315TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-PEMD2,315TR-ND
Bipolar Transistor Arrays, Pre-Biased 568-PEMD2,315TR-ND
TRANS ARRAY NPN/PNP SOT-666

TRANS ARRAY NPN/PNP SOT-666

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey
Product Category Bipolar RF Transistors Transistors Transistors
Product Number PEMD2,315 097551-PEMD2,315 568-PEMD2,315TR-ND
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMD2,315 Bipolar Transistor Arrays, Pre-Biased
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
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