NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123YT PDTD123YT

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 095444-PDTD123YT
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Family Name: PDTD123YT
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 250mW
Alternative Parts (Cross-Reference): DTD123YCHZGT116; DTD123YKFRAT146; DTD114GCT116; DTD123TKT146;
Introduction Date: April 12, 2005
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

TRANS PREBIAS NPN 250MW TO236AB / Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 Product overview: PDTD123YT from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 250MW, 50V, 500mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 250MW, 50V, 500mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTD123YT can be used for catalog matching and distributor lookup.