NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTD123TK PDTD123TK

Manufacturer: NXP
Win Source Part Number: 100377-PDTD123TK
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMT3; MPAK
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 100 @ 50mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

TRANS PREBIAS NPN 250MW SMT3 Product overview: PDTD123TK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTD123TK can be used for catalog matching and distributor lookup.