NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC143EE,115 PDTC143EE,115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PDTC143EE,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC143EE,115 - 096941-PDTC143EE,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC143EE,115
096941-PDTC143EE,115
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC143EE,115 096941-PDTC143EE,115
Manufacturer: NXP Win Source Part Number: 096941-PDTC143EE,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-75 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient

Manufacturer: NXP
Win Source Part Number: 096941-PDTC143EE,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SC-75
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTC143EE,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTC143EE,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTC143EE,115
TRANS PREBIAS NPN 50V 0.1A SC75

TRANS PREBIAS NPN 50V 0.1A SC75

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number PDTC143EE,115 096941-PDTC143EE,115 PDTC143EE,115
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC143EE,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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