NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123EK PDTC123EK

Manufacturer: NXP
Win Source Part Number: 271659-PDTC123EK
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMT3; MPAK
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 20mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

TRANS PREBIAS NPN 250MW SMT3 Product overview: PDTC123EK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTC123EK can be used for catalog matching and distributor lookup.