NXP Semiconductors PDTB143EUX

Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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Datasheet
Datasheet Summary
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PNP resistor-equipped transistor in a SOT323 (SC-70) surface-mount package, designed for switching applications with built-in bias resistors and a maximum collector current of 500 mA. The device is AEC-Q101 qualified and rated for operation up to 175 °C. The collector-emitter voltage is rated at -50 V, and the input voltage range depends on the specific variant. The bias resistor R1 for the PDTB143EU variant is specified as 4.7 kΩ with a 10% tolerance, and the R2/R1 ratio is 2.13-2.34. The same ratings apply to all variants in the PDTB1xxxU series, including those with trailing ordering codes such as PDTB143EUX.

Datasheet Summary
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PNP resistor-equipped transistor in a SOT323 (SC-70) surface-mount package, designed for switching applications with built-in bias resistors and a maximum collector current of 500 mA. The device is AEC-Q101 qualified and rated for operation up to 175 °C. The collector-emitter voltage is rated at -50 V, and the input voltage range depends on the specific variant. The bias resistor R1 for the PDTB143EU variant is specified as 4.7 kΩ with a 10% tolerance, and the R2/R1 ratio is 2.13-2.34. The same ratings apply to all variants in the PDTB1xxxU series, including those with trailing ordering codes such as PDTB143EUX.

Suppliers

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Supplier Links
 - PDTB143EUX - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number PDTB143EUX
Polarity PNP
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