NXP Semiconductors 250MW Bipolar Transistor PDTB123TT

Description
TRANS PREBIAS PNP 250MW TO236AB Product overview: PDTB123TT from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTB123TT can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 250MW TO236AB Product overview: PDTB123TT from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTB123TT can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore, Singapore
250MW Bipolar Transistor
293-PDTB123TT
250MW Bipolar Transistor 293-PDTB123TT
TRANS PREBIAS PNP 250MW TO236AB Product overview: PDTB123TT from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTB123TT can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 250MW TO236AB Product overview: PDTB123TT from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTB123TT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123TT - 061356-PDTB123TT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123TT
061356-PDTB123TT
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123TT 061356-PDTB123TT
Manufacturer: Nexperia USA Inc. Win Source Part Number: 061356-PDTB123TT Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-236AB (SOT23) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 061356-PDTB123TT
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 100 @ 50mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-PDTB123TT 061356-PDTB123TT
Product Name 250MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123TT
Polarity PNP PNP; PNP - Pre-Biased
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