Low VCEsat (BISS) transistors Product overview: PDTB123ET from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTB123ET can be used for catalog matching and distributor lookup.
Manufacturer: NXP
Win Source Part Number: 1236650-PDTB123ET
Manufacturer Homepage: www.nxp.com
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors |
| Product Number | 293-PDTB123ET | 1236650-PDTB123ET |
| Product Name | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123ET |
| Package Type | SOT3 |
