PNP resistor-equipped transistor with built-in bias resistors R1 = 4.7 kΩ and R2 = 4.7 kΩ, designed for digital switching applications in automotive and industrial systems. Available in surface-mounted plastic packages, it has a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device is AEC-Q101 qualified and offers power dissipation ratings up to 250 mW depending on package type, with a maximum junction temperature of 150 °C.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | PDTA143EQAZ |
| Polarity | PNP |
