NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA124ES PDTA124ES

Manufacturer: NXP
Win Source Part Number: 271564-PDTA124ES
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 60 @ 5mA, 5V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

TRANS PREBIAS PNP 500MW TO92-3 Product overview: PDTA124ES from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500MW. Search-friendly keywords include transistor, BJT, switching, amplification, 500MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTA124ES can be used for catalog matching and distributor lookup.