NXP Semiconductors Single, Pre-Biased Bipolar Transistors PDTA115ES,126

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3
  • Single, Pre-Biased Bipolar Transistors - PDTA115ES,126-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - PDTA115ES,126-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
PDTA115ES,126-ND
Single, Pre-Biased Bipolar Transistors PDTA115ES,126-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Transistors
Product Number PDTA115ES,126-ND
Product Name Single, Pre-Biased Bipolar Transistors
Polarity PNP
Unlock Full Specs
to access all available technical data

Similar Products

20 V, 2 A NPN medium power transistor - BC68PA,115 - Nexperia B.V.
Nexperia B.V.
20 V, 2 A NPN medium power transistor
BC68PA,115
Specs
Package Type SOT1061 SOT1061
View Details
9 suppliers
Transistor - 34002722 - Radwell International
Fuji Electric Corp. of America
Transistor
EV1234M
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT - TGF2952 - Qorvo
Qorvo
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
TGF2952
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details