Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
Manufacturer: NXP
Win Source Part Number: 1035530-PDTA114TS,12
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 200 @ 1mA, 5V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
TRANS PREBIAS PNP 50V TO92-3
| DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PDTA114TS,126-ND | 1035530-PDTA114TS,126 | PDTA114TS,126 |
| Product Name | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TS,126 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP; PNP - Pre-Biased |