NXP Semiconductors Single, Pre-Biased Bipolar Transistors PDTA114TS,126

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

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Single, Pre-Biased Bipolar Transistors - PDTA114TS,126-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
PDTA114TS,126-ND
Single, Pre-Biased Bipolar Transistors PDTA114TS,126-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TS,126 - 1035530-PDTA114TS,126 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TS,126
1035530-PDTA114TS,126
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TS,126 1035530-PDTA114TS,126
Manufacturer: NXP Win Source Part Number: 1035530-PDTA114TS,12 6 Packaging: AMMO PACKAGE Mounting: Through Hole Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 200 @ 1mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 1035530-PDTA114TS,126
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 200 @ 1mA, 5V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTA114TS,126 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTA114TS,126
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTA114TS,126
TRANS PREBIAS PNP 50V TO92-3

TRANS PREBIAS PNP 50V TO92-3

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number PDTA114TS,126-ND 1035530-PDTA114TS,126 PDTA114TS,126
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TS,126 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased
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