NXP Semiconductors PDTA114EE/DG,115

Description
Small Signal Bipolar Transistor, 0.1A, 50V, PNP, SC-75
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Description
Small Signal Bipolar Transistor, 0.1A, 50V, PNP, SC-75
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Datasheet
Datasheet Summary
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PNP resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, designed for digital applications in automotive and industrial segments. It has a collector-emitter voltage rating of -50 V, an output current capability of -100 mA, and a total power dissipation of 150 mW when mounted on an FR4 PCB. The device is housed in an SC-75 (SOT416) surface-mounted package with three leads and is AEC-Q101 qualified.

Datasheet Summary
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PNP resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, designed for digital applications in automotive and industrial segments. It has a collector-emitter voltage rating of -50 V, an output current capability of -100 mA, and a total power dissipation of 150 mW when mounted on an FR4 PCB. The device is housed in an SC-75 (SOT416) surface-mounted package with three leads and is AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
 - PDTA114EE/DG,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 50V, PNP, SC-75

Small Signal Bipolar Transistor, 0.1A, 50V, PNP, SC-75

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number PDTA114EE/DG,115
Polarity PNP
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