NXP Semiconductors 250MW Bipolar Transistor PDTA113EK

Description
TRANS PREBIAS PNP 250MW SMT3 Product overview: PDTA113EK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTA113EK can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 250MW SMT3 Product overview: PDTA113EK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTA113EK can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
250MW Bipolar Transistor
293-PDTA113EK
250MW Bipolar Transistor 293-PDTA113EK
TRANS PREBIAS PNP 250MW SMT3 Product overview: PDTA113EK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTA113EK can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 250MW SMT3 Product overview: PDTA113EK from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PDTA113EK can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA113EK - 061341-PDTA113EK - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA113EK
061341-PDTA113EK
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA113EK 061341-PDTA113EK
Manufacturer: NXP Win Source Part Number: 061341-PDTA113EK Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMT3; MPAK Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 1.5mA, 30mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 30 @ 40mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: NXP
Win Source Part Number: 061341-PDTA113EK
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMT3; MPAK
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 1.5mA, 30mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 40mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-PDTA113EK 061341-PDTA113EK
Product Name 250MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA113EK
Polarity PNP PNP; PNP - Pre-Biased
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