NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single - PBSS8110S PBSS8110S

Manufacturer: NXP
Win Source Part Number: 042054-PBSS8110S
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 200mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 250mA, 10V
Maximum Power Dissipation: 830mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

TRANS NPN 100V 1A TO92 Product overview: PBSS8110S from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS8110S can be used for catalog matching and distributor lookup.