NXP Semiconductors PBSS4240XF

Description
Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN
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Description
Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN
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Datasheet
Datasheet Summary
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NPN low VCEsat (BISS) transistor in a SOT89 surface-mounted package, rated for 40 V collector-emitter voltage and 2 A continuous collector current, with a peak collector current of 3 A and saturation voltage as low as 260 mV at 1 A collector current and 100 mA base current. It dissipates up to 1.35 W with a 6 cm² collector pad, and operates with a junction temperature up to 150 °C. The device is not explicitly qualified for automotive use.

Datasheet Summary
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NPN low VCEsat (BISS) transistor in a SOT89 surface-mounted package, rated for 40 V collector-emitter voltage and 2 A continuous collector current, with a peak collector current of 3 A and saturation voltage as low as 260 mV at 1 A collector current and 100 mA base current. It dissipates up to 1.35 W with a 6 cm² collector pad, and operates with a junction temperature up to 150 °C. The device is not explicitly qualified for automotive use.

Suppliers

Company
Product
Description
Supplier Links
 - PBSS4240XF - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN

Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number PBSS4240XF
Polarity NPN
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