NXP Semiconductors Bipolar Transistor Arrays, Pre-Biased PBLS6003D,115

Description
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
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Description
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
Request a Quote Datasheet

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Bipolar Transistor Arrays, Pre-Biased - 568-PBLS6003D,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-PBLS6003D,115TR-ND
Bipolar Transistor Arrays, Pre-Biased 568-PBLS6003D,115TR-ND
TRANS NPN PREBIAS/PNP 0.6W 6TSOP

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6003D,115 - 107545-PBLS6003D,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6003D,115
107545-PBLS6003D,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6003D,115 107545-PBLS6003D,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 107545-PBLS6003D,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 185MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSOP Maximum Current Collector: 100mA, 700mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 60V Max Vce (sat): 150mV @ 500μA, 10mA / 340mV @ 100mA, 1A Collector Cut-off Current(Max): 1μA, 100nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 150 @ 500mA, 5V Maximum Power Dissipation: 600mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 107545-PBLS6003D,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 185MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSOP
Maximum Current Collector: 100mA, 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 60V
Max Vce (sat): 150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
Collector Cut-off Current(Max): 1μA, 100nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 150 @ 500mA, 5V
Maximum Power Dissipation: 600mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

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 - PBLS6003D,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

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Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 568-PBLS6003D,115TR-ND 107545-PBLS6003D,115 PBLS6003D,115
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6003D,115
Polarity NPN; PNP; 1 NPN Pre-Biased, 1 PNP NPN; PNP
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