NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2023D,115 PBLS2023D,115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PBLS2023D,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2023D,115 - 114949-PBLS2023D,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2023D,115
114949-PBLS2023D,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2023D,115 114949-PBLS2023D,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 114949-PBLS2023D,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: 1 PNP Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSOP Maximum Current Collector: 100mA, 1.8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 20V Max Vce (sat): 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A Collector Cut-off Current(Max): 1μA, 100nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 200 @ 1A, 2V Maximum Power Dissipation: 760mW Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 114949-PBLS2023D,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: 1 PNP Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSOP
Maximum Current Collector: 100mA, 1.8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 20V
Max Vce (sat): 150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
Collector Cut-off Current(Max): 1μA, 100nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 200 @ 1A, 2V
Maximum Power Dissipation: 760mW
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 568-PBLS2023D,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-PBLS2023D,115TR-ND
Bipolar Transistor Arrays, Pre-Biased 568-PBLS2023D,115TR-ND
TRANS PREBIAS DUAL PNP 6TSOP

TRANS PREBIAS DUAL PNP 6TSOP

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey
Product Category Bipolar RF Transistors Transistors Transistors
Product Number PBLS2023D,115 114949-PBLS2023D,115 568-PBLS2023D,115TR-ND
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2023D,115 Bipolar Transistor Arrays, Pre-Biased
Polarity NPN; PNP PNP; 1 PNP Pre-Biased, 1 PNP
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