NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2003S,115 PBLS2003S,115

Description
Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SO8
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PBLS2003S,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SO8

Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SO8

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2003S,115 - 1086364-PBLS2003S,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2003S,115
1086364-PBLS2003S,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2003S,115 1086364-PBLS2003S,115
Manufacturer: NXP Win Source Part Number: 1086364-PBLS2003S,11 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SO Maximum Current Collector: 100mA, 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 20V Max Vce (sat): 150mV @ 500μA, 10mA / 355mV @ 300mA, 3A Collector Cut-off Current(Max): 1μA, 100nA Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 150 @ 2A, 2V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: NXP
Win Source Part Number: 1086364-PBLS2003S,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SO
Maximum Current Collector: 100mA, 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 20V
Max Vce (sat): 150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
Collector Cut-off Current(Max): 1μA, 100nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V / 150 @ 2A, 2V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 568-7231-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-7231-2-ND
Bipolar Transistor Arrays, Pre-Biased 568-7231-2-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO

Buy Now Datasheet
Singapore, Singapore
1.5W Bipolar Transistor
293-PBLS2003S,115
1.5W Bipolar Transistor 293-PBLS2003S,115
TRANS NPN PREBIAS/PNP 1.5W 8SO Product overview: PBLS2003S,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.5W. Search-friendly keywords include transistor, BJT, switching, amplification, 1.5W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS2003S,115 can be used for catalog matching and distributor lookup.

TRANS NPN PREBIAS/PNP 1.5W 8SO Product overview: PBLS2003S,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.5W. Search-friendly keywords include transistor, BJT, switching, amplification, 1.5W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS2003S,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBLS2003S,115 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBLS2003S,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBLS2003S,115
TRANS NPN PREBIAS/PNP 1.5W 8SO

TRANS NPN PREBIAS/PNP 1.5W 8SO

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBLS2003S,115 1086364-PBLS2003S,115 568-7231-2-ND 293-PBLS2003S,115 PBLS2003S,115
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS2003S,115 Bipolar Transistor Arrays, Pre-Biased 1.5W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP NPN; PNP
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