NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX7002BKR NX7002BKR

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 209395-NX7002BKR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 1nC @ 10V Max Input Capacitance: 23.6pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): RK7002BMT116; BSN20BK; NX7002BK; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 209395-NX7002BKR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 1nC @ 10V Max Input Capacitance: 23.6pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): RK7002BMT116; BSN20BK; NX7002BK; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX7002BKR - 209395-NX7002BKR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX7002BKR
209395-NX7002BKR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX7002BKR 209395-NX7002BKR
Manufacturer: Nexperia USA Inc. Win Source Part Number: 209395-NX7002BKR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 270mA (Ta) Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 1nC @ 10V Max Input Capacitance: 23.6pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V Alternative Parts (Cross-Reference): RK7002BMT116; BSN20BK; NX7002BK; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 209395-NX7002BKR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 1nC @ 10V
Max Input Capacitance: 23.6pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 200mA, 10V
Alternative Parts (Cross-Reference): RK7002BMT116; BSN20BK; NX7002BK;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 209395-NX7002BKR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX7002BKR
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 310 to 1670 milliwatts
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