NXP Semiconductors NX7002AK2,215

Description
NX7002AK - Small Signal Field-Effect Transistor, 0.3A, 60V, N-Channel, MOSFET, TO-236AB
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Description
NX7002AK - Small Signal Field-Effect Transistor, 0.3A, 60V, N-Channel, MOSFET, TO-236AB
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Datasheet
Datasheet Summary
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NX7002AK2,215 is a variant of the NX7002AK series, a 60 V single N-channel Trench MOSFET in a TO-236AB (SOT23) surface-mounted package. It features ESD protection, very fast switching, and a drain-source on-state resistance of 3 to 4.5 Ω at Vₒₓ = 10 V and Iₓ = 100 mA. Continuous drain current is rated up to 190 mA at Tₐₐₘ = 25 °C on an FR4 PCB with a 1 cm² drain pad. The device supports a maximum junction temperature of 150 °C and total power dissipation of 265 mW at 25 °C ambient. Applications include relay driving and low-side load switching.

Datasheet Summary
Powered by GS/AI

NX7002AK2,215 is a variant of the NX7002AK series, a 60 V single N-channel Trench MOSFET in a TO-236AB (SOT23) surface-mounted package. It features ESD protection, very fast switching, and a drain-source on-state resistance of 3 to 4.5 Ω at Vₒₓ = 10 V and Iₓ = 100 mA. Continuous drain current is rated up to 190 mA at Tₐₐₘ = 25 °C on an FR4 PCB with a 1 cm² drain pad. The device supports a maximum junction temperature of 150 °C and total power dissipation of 265 mW at 25 °C ambient. Applications include relay driving and low-side load switching.

Suppliers

Company
Product
Description
Supplier Links
 - NX7002AK2,215 - Rochester Electronics
Newburyport, MA, United States
NX7002AK - Small Signal Field-Effect Transistor, 0.3A, 60V, N-Channel, MOSFET, TO-236AB

NX7002AK - Small Signal Field-Effect Transistor, 0.3A, 60V, N-Channel, MOSFET, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF MOSFET Transistors
Product Number NX7002AK2,215
Polarity N-Channel
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