NXP Semiconductors Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF MRFE6S9200HSR3

The MRFE6S9200HSR3 is an N-channel lateral MOSFET for broadband RF power amplification up to 1000 MHz in 28 V base station systems. Packaged in the NI-880S case (CASE 465C-02, STYLE 1), it measures 22.99-23.24 mm long, 13.60-13.80 mm wide, and 1.45-1.70 mm high. It is rated for 66 V drain-source voltage, 150°C case temperature, and 225°C junction temperature. The device is internally matched, features integrated ESD protection compliant with JESD22-A114 (Class 1C) and EIA/JESD22-A115 (Class A), and is RoHS compliant. It operates with 21 dB typical gain and 35% drain efficiency at 880 MHz, 58 W average output, and can withstand 10:1 VSWR at 32 Vdc with 300 W CW power. Supplied in tape and reel, 250 units per reel.