The MRF9002NR2 is a three-transistor N-channel enhancement-mode lateral MOSFET array designed for broadband RF power amplification up to 1000 MHz in 26 V base station applications. It is packaged in a PFP-16 plastic flat pack with an exposed solderable backside for thermal management, measuring up to 9.15 mm in width and 7.10 mm in length. Each transistor delivers 2 W output power at 960 MHz with 18 dB power gain and 50% drain efficiency. The device supports a 10:1 VSWR at full power and operates with a maximum junction temperature of 150 °C. Thermal resistance from junction to case is 12 °C/W per transistor. It is RoHS compliant and supplied in tape and reel packaging. The part meets JESD 22-A113 moisture sensitivity level 3 and operates within a storage temperature range of -65 °C to +150 °C.
FET RF 65V 960MHZ 16-PFP / Trans RF MOSFET N-CH 65V 16-Pin PFP T/R Product overview: MRF9002NR2 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 960MHZ. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 65V, 960MHZ, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MRF9002NR2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-MRF9002NR2 |
| Product Name | 65V 960MHZ MOSFET Transistor |
| Package Type | Reel package |
